Electron-beam lithography

The JEOL JBX-5500FS electron beam lithography system is designed for writing patterns with nanometer precision. With this system, it is possible to reliably fabricate structures with feature sizes well below 100 nm. The system has an interferometer-controlled stage which allows for the possibility of writing nanoscale patterns across large substrates with a stitching accuracy of better than 15 nm. The system produces an electron beam from a ZrO/W emitter and a four-stage electron beam focusing lens system to produce high-fidelity patterns from a CAD layout. A high-speed stage equipped with a laser position system enables patterns to be written across an entire 100 mm wafer.

Specifications:

• Beam current: 100 pA to 40 nA
• Acceleration voltages: 25 kV to 50 kV
• Write field: 100x100 um (Mode 4) or 1000x1000 um (Mode 2)
• Width of electron beam: 4 nm (Gaussian)
• Scan rate and type: 12 MHz, vector scanning with scan increments of 0.5 nm
• Available photoresists: CSAR62, PMMA, ma-N, etc.