Atomic layer deposition (ALD) is an advanced deposition system with precise control of film thickness. This tool uses a technique that induces the growth of the thin film atomic layer by layer. Typically, the substrate is subject to exposure of gaseous species such as methane (CH4) and liquid precursors, such as trimethylaluminum (TMA) or water (H2O). Because the reaction between the precursors and surface is self-limiting, each cycle of reaction induces a single atomic layer of deposition. By controlling the number of cycles, the thickness of deposited material can be precisely determined. The ALD process can be done in both continuous and exposure mode. ALD is a useful technique in fabricating semiconductor channels, passivation layers, or nanoscale thin films.
Available materials for deposition:
Specifications:
- Substrate size: up to 200 mm
- Substrate temperature from room temperature to 350 °C
- Deposition Uniformity: <1 % (1σ) (for Al2O3)
- Cycle Time: <2 seconds per cycle with Al2O3 at 200 °C
- Precursor Delivery System:
- 2 lines standard, up to 6 lines available
- Each line can accommodate solid, liquid and gas precursors
- Lines can be independently heated up to 200 °C
- Integrated Ozone
- In-Situ Ellipsometry
- In-Situ QCM
